Principal Investigator: Prof. Newton Cesario Frateschi

Ongoing researches:

Laser, Semiconductor Optical Modulators and Amplifiers

Microlasers, resonators and microsensors

Active layer of QW III-V semiconductor

Active layer of quantum dots in III-V semiconductor

Silicon photonics: amorphous Silicon and/or nanoclusters

Team

PhD student

David Figueira

José Roberto Mialichi

Adenir Silva

Felipe Valline

Paulo Felipe Jarschel

MSc student

Luis Barea

Undergrad student

Debora Principe

Elohin Fonseca dos Reis

Daniel Robson Pinto

Industrial Partner:

Mectron

The device research laboratory (LPD) is the oldest group in the “Gleb Wataghin”.Physics Institute (IFGW)

It was established in 1972 by Prof. J.E.Riper with strong emphasis in developing devices for optical telecommunication.

In its 34 years of existence, it has developed several optoelectronic devices and prototypes using GaAs/AlGaAs, InGaAsP/InP, and GaAs/GaAlSb compounds.

More recently, it has widened its focus of research to incorporate electronic and other optoelectronic devices, as well as fundamental investigation in material synthesis, nano-science and nano-technology.

Located in the Applied Physics Department, the LPD has a full facility for material synthesis, processing, and characterization of semiconductor devices.

Equipments:

• Chemical Beam epitaxy System.

• Clean Room Facility: o UV300 mask aligner o Metallization Systems o Wet and Dry etching systems

• Characterization: o Atomic Force Microscopy o Secondary Ion Mass Spectroscopy (SIMS) o Photoluminescence o Hall & CV profile meter measurements o Complete optical/electronic device Characterization